Uniform Thin Films Research Articles

Structural and optical properties of ZnO thin films as a function of pH value and its effect on photoelectrochemical water splitting

ZnO nanoparticles were synthesised via sol–gel method, and then, deposited on a glass substrate using the spin-coating procedure to hand in ZnO thin films. In order to study the effect of alkaline sol on different properties of ZnO thin films, the pH value of sol was adjusted with ammonia. Then, the structural, optical, and photoelectrochemical properties of the prepared samples were analysed. According to XRD analyses, by increasing pH values, the size of ZnO particles increases and the films’ crystallinity improves. In addition, SEM micrographs affirm the uniformity of thin films. According to AFM findings, the morphology and roughness of the samples’ surface are affected by pH values in such a way that with increasing the pH, the roughness of the surface decreases, and the crystallinity improves. Also, both UV–vis peaks shift towards lower wavelengths with increasing pH value of ZnO sol. This means that the more the pH values of ZnO sol, the more the excitation energy of electrons. On the other hand, the numerical values of the energy bandgap decrease by increasing pH. According to PL results, the increase of pH causes the separated electrons and holes to have more energy and can move away from each other. So, the recombination process rate decreases; this result affirms by EIS findings. Increasing the optical absorption and reducing charge recombination are in favour of the photocatalytic reactions. Clearly, increasing the pH value causes the stable photocurrent to increase and the threshold voltage of (J-V) diagram to decrease. Also, the samples show recognisable sensitivity to light. As a final result, the best suggested amount of pH to fabricate ZnO photoanods for water splitting is 10.5.

Exploring the weak visible-near-infrared and NO2 detection capabilities of PbS/Sb2O5 heterostructures with DFT interpretations

The need for photosensors and gas sensors arises from their pivotal roles in various technological applications, ensuring enhanced efficiency, safety, and functionality in diverse fields. In this paper, interlinked PbS/Sb2O5 thin film has been synthesized by a magnetron sputtering method. We control the temperature to form the nanocomposite by using their different nucleation temperature during the sulfonation process. A nanostructured PbS/Sb2O5 with cross-linked morphology was synthesized by using this fast and efficient method. This method has also been used to grow a uniform thin film of nanocomposite. The photo-sensing and gas-sensing properties related to the PbS/Sb2O5 compared with those of other nanomaterials have also been investigated. The experimental and theoretical calculations reveal that the PbS/Sb2O5 exhibits extraordinarily superior photo-sensing and gas-sensing properties in terms of providing a pathway for electron transport to the electrode. The attractive highly sensitive photo and gas sensing properties of PbS/Sb2O5 make them applicable for many different kinds of applications. The responsivity and detectivity of PbS/Sb2O5 are 0.28 S/mWcm−2 and 1.68 × 1011 Jones respectively. The sensor response towards NO2 gas was found to be 0.98 at 10 ppb with an limit of detection (LOD) of 0.083 ppb. The PbS/Sb2O5 exhibits high selectivity towards the NO2 gas. Density functional theory (DFT) and time-dependent density functional theory (TD-DFT) were used to analyze the geometries, electronic structure, and electronic absorption spectra of a light sensor fabricated by PbS/Sb2O5. The results are very analogous to the experimental results. Both photosensors and gas sensors are indispensable tools that contribute significantly to the evolution of technology and the improvement of various aspects of modern life.

Structure–Property Relationships of Solution‐Processable Diarylethene‐Based Main‐Chain Photochromic Polymers

AbstractA series of alternating copolymers of a dithienylethene with di‐n‐alkyl‐fluorene (P1–P3), di‐n‐hexylphenylene (P4), 9‐heptadecanylcarbazole (P5), and 4,8‐bis(3,5‐dioctyl‐2‐thienyl)‐1,5‐dithia‐s‐indacene (P6) are designed, synthesized, and characterized. All of the polymers are soluble in common organic solvents such as chloroform, dichloromethane, toluene, and tetrahydrofuran. The side‐chain length affected the solubility of the polymer, molecular weight, and the glass transition temperature. Solutions of P1–P6 show photochromism with high quantum yields of 6‐π electrocyclization (41–87%) and cycloreversion (0.4–1.1%). These polymers also formed uniform thin films and the rates of solid state photoisomerization are measured relative to P4, which has the highest cyclization and cycloreversion rates. The color of the photochromic polymer is tuned according to the comonomer and the maximum absorption wavelength ranged from 569 to 675 nm in the closed isomeric form. All the polymers are thermally stable and show no signs of photodegradation after being exposed to UV‐light for 120 min in air. Based on these promising results, these polymers may be useful for multifunctional organic electronic devices.

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Nucleation of highly uniform AlN thin films by high volume batch ALD on 200 mm platform

Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma

Enhanced Thickness Uniformity of MoS2 Thin Films on SiO2/Si Substrates via Substrate Pre-Treatment with Oxygen Plasma

Analysis of low-speed blade coating flows

From industrial-scale production to small-scale fabrication of functional films, the blade coating method is used widely to apply a uniform thin liquid film on a moving substrate. However, conventional hydrodynamic models are inadequate for laboratory-scale low-speed blade coating, where capillary forces dominate. In this study, the low-speed blade coating of non-evaporative Newtonian fluids was investigated in experimental, computational and analytical approaches. The transient free boundary problem was solved utilizing a two-dimensional finite element method, and a simple viscocapillary model was developed to describe the viscous stress and capillary forces within the puddle, and predict the thickness of the wet film as a function of the speed of the substrate. Comparing the predicted film thickness with the computational results, and a flow visualization experiment of blade coating with silicone oil, respectively, confirmed the model's validity. The study indicates that the proposed model may be a useful tool for optimizing laboratory coating processes, as it provides a greater understanding of the low-speed blade coating system on a laboratory scale.

Gallium oxide cantilevered thin film-based solar-blind photodetector and its arc detection applications

The performance of gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) thin film detectors based on Metal-Semiconductor-Metal (MSM) is highly dependent on the uniformity of the Ga<sub>2</sub>O<sub>3</sub> thin film, and the manufacturing process is quite sophisticated, which poses a challenge for the scale-up and mass production of thin film photodetectors. In this work, an MSM Ga<sub>2</sub>O<sub>3</sub> thin film solar-blind photodetector with five-finger interdigital electrodes is fabricated by physically depositing Ga<sub>2</sub>O<sub>3</sub> thin film on the surface of a mass-produced cantilevered thin film chip for the first time. The microelectromechanical system (MEMS) process prepares the cantilever electrode structure, which protects the internal circuit and the integrity of the thin film. The Ga<sub>2</sub>O<sub>3</sub> thin film treated by argon plasma at a low temperature is amorphous, but the photodetector still possesses considerable ultraviolet detection performance. At a bias voltage of 18 V, it approaches the detection performance of crystalline Ga<sub>2</sub>O<sub>3</sub> thin film, with a detectivity of 7.9×10<sup>10</sup> Jones, an external quantum efficiency of 1779%, rise time and decay time of 1.22 s and 0.24 s, respectively. Moreover, a system of arc detection is built in outdoor environments, as shown in FIG. 1 (a). Without any optical focusing system, this photodetector achieves sensitive detection of pulsed arcs in an outdoor sunlight environment. For pulsed arcs with an output voltage of 100 kV, the photodetector is capable of sensitive detection at a distance of 25 cm, as depicted in FIG. 1 (b). Besides, the maximum detection distance of 155 cm indicates that the photodetector will have a favorable potential application value in the field of solar-blind detection. This work develops a sensitive functional thin film deposition technology based on the cantilever electrode structure fabricated by the MEMS process, which avoids the influence of the large-area uniformity of the functional thin film on the etching circuit. It provides a new technical approach and process route for the preparation of MSM photodetectors.

Study On the Uniformity Aluminum Nitrate Thin Film On 2-Inch Silicon Substrate Prepared by RF Magnetron Sputtering

Aluminum nitrate (AlN) has attracted the researcher's interest due to its unique properties in the semiconductor material and other high-performance devices. This results in numerous techniques to investigate the uniformity of AlN thin film. The deposition in this study is carried out on an AlN on a 2-inch silicon substrate using a magnetron sputtering technique. The RF magnetron sputtering can also produce better film quality and deposit a wide variety of insulators, metals, alloys and composites. In this study, the AlN film was deposited using the RF magnetron sputtering by using three different parameters for the growth of the AlN on the 2-inch Si substrate for uniformity analysis. The uniformity of AlN thin film includes analyses of the structural, thickness, topology and surface morphology by using the characterization of X-ray diffraction (XRD), atomic force microscopy (AFM), surface profiler and field emission scanning electron microscopy (FE-SEM). Based on the result from three parameters that have been done, parameter one shows the best results. For the crystalline structure results, the peak (100) AlN indicates the highly textured phases similar to a single crystal, and the cross-section result in FE-SEM shows the homogenous thickness.

Effect of Surface Pretreatment to Reduce the Incubation Period of Iridium Thin Films Grown by ALD on the Oxide Surface

Iridium (Ir) has low figure of merit(×λ) and high melting temperature properties, so it has been recently spotlighted as a very important copper (Cu) alternative interconnect material in next-generation semiconductor devices. In particular, in the case of depositing a thin film using atomic layer deposition (ALD) technology, it can be expected to deposit extremely thin film with conformal, uniform and excellent step coverage characteristics even in a very complex structure or a trench structure of several nm dimension due to the inherent self-limiting characteristic of ALD. In this regard, ALD-Ir is considered as one of the most suitable metallization process for the application of advanced semiconductor interconnects. Therefore, considerable efforts have been conducted to develop a reliable ALD-Ir process having improved film qualities. And, ALD-Ir process with excellent thin film properties such as low electrical resistivity and negligible oxygen impurities was recently reported using Tricarbonyl (1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl iridium (C18H27IrO3 or TICP) precursor and oxygen [1]. However, in the case of this TICP precursor, it was difficult to deposit extremely thin and continuous Ir films on the hydroxyl-terminated oxide layer due to its long incubation delay.Therefore, in this study, a method for depositing a very thin, uniform and continuous ALD-Ir thin film with low resistivity even on oxide materials was explored by reducing the incubation period and promoting nucleation using various surface pretreatment conditions. In addition, the nucleation behavior as well as film properties of ALD-Ir on the oxide material were systemically compared and analyzed according to the surface pretreatment conditions, and finally, ALD-Ir thin film with excellent properties on the oxide surface was obtained.

Surface engineering of Sio2-Zro2 films for augmenting power conversion efficiency performance of silicon solar cells

Improving solar cell performance hinges significantly on the application of anti-reflective surface coatings. A wide variety of coating techniques, including blade coating, spin coating, dip coating, and others were employed. The present research investigation employed various coating materials, namely SiO2 (Silicon dioxide), ZrO2 (Zirconium dioxide), and SiO2–ZrO2 blends, to apply a protective layer onto polycrystalline silicon solar cells using the sputter coating process. The efficiency of these solar cells with multilayer coating was assessed through diverse characterization methods. The uniform thin films were obtained using a 45-min coating process using an input voltage source of 17 kV, which was confirmed through analyses conducted using FESEM and AFM techniques. The UV–Vis spectroscopy and current-voltage source metre were employed to examine the light absorption and transmittance of bare and coated silicon solar cells. When compared to alternative solar cells, the solar cell coated with a combination of SiO2 and ZrO2 demonstrated uniform deposition and a low light reflectance of only 6 %. SiO2–ZrO2 gains a highest power conversion efficiency (PCE) of 17.6 % under controlled light source. This superior performance was due to the increase in photon transmittance in to the depletion region. Furthermore, the electrical resistivity of the SiO2–ZrO2 blend coated solar cell was measured using the four-probe method was found to be 2.89 × 10−3 Ω-cm, which was lower than that of other solar cells. From the experimental results, it was clear that SiO2 - ZrO2 blend-coated solar cells outperformed both other coated and uncoated solar cells. Consequently, SiO2–ZrO2 blends emerged as superior anti-reflective materials for achieving peak performance.

Fabrication of iron doped titanium dioxide photocatalytic nanocomposite supported by water-quenched blast furnace slag and photocatalytic degradation of wastewater

Metallurgical solid waste blast furnace water quenched slag (WBFS) was employed as carrier materials to prepare Fe–TiO2/WBFS composite photocatalyst using a sol-gel method for improving both the photocatalytic activity and the high-value utilization of metallurgical solid waste. The Fe3+ doping technology was adopted to increase the utilization of solar energy. The influencing factors and photocatalytic activity were systematically evaluated by thermogravimetry/differential thermal analyser (TG-DSC), X-Ray Diffraction (XRD), Brunauer-Emmett-Teller (BET) method, scanning electron microscopy-energy spectrometer (SEM-EDS), X-ray photoelectric spectroscopy (XPS), UV–Vis absorption spectrum and photoluminescence spectra technology through the degradation rate of methylene blue (MB) solution. The results showed that the Fe3+ ions were successfully incorporated into the TiO2 lattice, which had no effect on the crystalline phase of TiO2 and expanded the spectral response range of TiO2 from the ultraviolet region to the visible light region. When the calcination temperature was at 450 °C and the number of Fe–TiO2 sol loading cycles was two times, the photocatalytic activity of Fe–TiO2/WBFS presented the strongest, and the degradation ratio of MB reach the maximum value of 98.9 %. A uniform and dense anatase TiO2 thin film was wrapped on the surface of WBFS. The photocatalytic activity first improved and then weakened with an increase of calcination temperature, Fe3+ doping amounts and the loading cycles of sol. The TiO2 film changed from thin to thick and uneven to uniform, until cracking and spalling phenomenon finally occurred with an increase of Fe–TiO2 sol loading cycle from 1 to 3 times. When the Fe–TiO2/WBFS was reused for four times, the degradation rate of MB could still show 67.4 %, being far higher than that of TiO2/WBFS of 25.4 %.

Synthesis and Methane Gas Sensing Study of Uniform Zinc Oxide Nanoparticles and Thin Film

Synthesis and Methane Gas Sensing Study of Uniform Zinc Oxide Nanoparticles and Thin Film

Comprehensive Crystal Regulation Reduces Interfacial Energy Loss for Efficient Blue Perovskite Light-Emitting Diodes.

As an essential component of future full-color displays, blue perovskite light-emitting diodes (PeLEDs) still lag far behind the red and green counterparts in the device performances. In the mainstream quasi-2D blue perovskite system, trap-mediated nonradiative loss, low energy transfer efficiency, and interface fluorescence quenching remain significant challenges. Herein, guanidinium thiocyanate (GASCN) and potassium cinnamate (PCA) are respectively introduced into the hole transport layer (HTL) and the perovskite precursor to achieve a dense and uniform perovskite thin film with greatly improved optoelectronic properties. Therefore, adequate GA+ acts as pre-nucleation sites on the HTL surface, regulating crystallization through strong hydrogen bonding with perovskite intermediates. The realized polydisperse domain distribution is conducive to cascade energy transfer, and the improved hole transport ability alleviates interface fluorescence quenching. In addition, the SCN- and CA- groups can form coordination bonds with the defects at the buried perovskite interface and grain boundaries, respectively, which effectively suppresses the detrimental nonradiative recombination. Benefitting from the comprehensive crystal regulation, blue PeLEDs featuring stable emission at 484 and 468nm exhibit improved external quantum efficiencies of 11.5% and 4.3%, respectively.

Perovskite Light-Emitting Diode Display Based on MoS2 Backplane Thin-Film Transistors.

The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS2 )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS2 TFTs to fabricate an active-matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next-generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems.

Study on PECVD-hetero-grown β-Ga2O3 thin film and temperature-modulated solar-blind UV photodetection

Using a convenient and low-cost plasma-enhanced chemical vapor deposition technique, uniform Ga2O3 thin films were hetero-grown on c-plane sapphire substrates at different temperatures, with a root mean square roughness as low as 2.71 nm and a growth rate of up to 1121.30 nm h−1; and then the solar-blind UV photodetection performances were discussed in detail. Metal-semiconductor-metal solar-blind UV photodetectors (PDs) based on the five Ga2O3 films prepared at different temperatures exhibit ultra-low dark currents (I dark) ranging among 22–168 fA. Under the illumination of 254 nm UV light, the PD prepared by the film grown at 820 °C possesses the highest performance, with a high photo-to-dark current ratio of 1.47 × 105, a low rise/decay time of 0.067/0.13 s, a specific detectivity (D *) of 3.56 × 1012 Jones, and a linear dynamic range of 92.89 dB. Overall, the results in this work may well provide a referable method for growing cost-effective and ultralow-noise Ga2O3 thin films, as well as achieving decent solar-blind UV sensing applications.

Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition

In this study, a novel, simple, and robust mist chemical vapor deposition is demonstrated, compatible with existing industrial practices to deposit gallium oxide thin films and influence of mist intensity on the properties of gallium oxide. The intensity of the mist generation is optimized to obtain smooth and uniform thin films. The thin film deposited in this work is mixed phase polycrystalline gallium oxide. Ultraviolet–visible–near‐infrared spectroscopy and photo response of thin film unveil that gallium oxide thin film is responsive to ultraviolet wavelengths including deep ultraviolet‐C and ultraviolet‐B bands and the mist‐generation intensity has negligible influence on the bandgap of the thin film. Thickness of thin film can be altered by varying the mist intensity. It is observed that there is no appreciable impact on refractive index of varying mist intensity. Morphological studies prove the formation of ultrasmooth thin film with root mean square value of 0.628 nm; which is closer and/or better than conventional semiconductor thin‐film deposition processes used for depositing Ga2O3.

Advanced Process Monitoring Through Fault Detection and Classification for the Process Development of Tantalum Nitride Thin-Film Resistors

This paper discusses the optimization of an advanced process monitoring scheme with interdicting fault detection and classification (FDC) capabilities that improved the control over the process development of Tantalum Nitride thin film resistors (TaN TFR). Its implementation in a high-volume manufacturing environment resulted in a reduction of misprocessed wafers, shorter equipment downtime, higher throughput, enhanced process visibility, and yield improvement. Along with optimizing FDC capabilities, implementing a short loop sampling plan reduced the turnaround time for early electrical characterization by a factor of four; this allowed for timely inline adjustments within the fabrication process to tighten the statistical process control (SPC) over the distribution of the process control monitor (PCM) TaN resistor value and improve thin film uniformity.

Physical vapor deposition simulator by graphical processor unit ray casting

This paper presents fast, accurate software for modeling physical vapor deposition systems over irregular surfaces. The model is implemented using graphics processing unit (GPU) ray casting. Applied models are viewed as a cross section of the area of interest. Given evaporation rate, time, and angular profiles in a vacuum system, an iterative time-step approach for calculating deposition profiles is calculated in the GPU architecture following a ballistic modeling approach. Thin-film technologies for the electronics industry will require evaporations on complex surfaces. Depending on the nature of the surface, a uniform thin film across the topology is wanted for various device parameters. The ray casting method is tested against various profiles. The code is freely distributed on GitHub (see https://github.com/adam-r-thomas/PVDS).

Two-dimensional VO2 nanosheet converted from MXene for flexible thermochromic smart windows

Vanadium dioxide (VO2) has attracted considerable attentions owing to its unique phase-transition based thermochromic (TC) feature, which make it promising for energy-saving smart windows. For large-scale integration to ubiquitous applications, it is highly desirable to develop a simple and efficient casting technique of a reliable VO2 thin film with enhanced TC performance. However, a significant challenge lies in achieving consistent TC performance when casting VO2 thin film on diverse non-planar surfaces. Herein, we report the fabrication of two-dimensional (2D) monoclinic-phase VO2 nanosheet through the oxidation of single-layer V2CTx nanosheet. Benefitting from the high packing density of the 2D morphology, uniform thin film composed solely of VO2 nanosheet can be directly casted on various surfaces. Moreover, the tightly bound nanosheets ensure remarkable phase-transition and significantly reduced optical scattering. As a result, the VO2 nanosheet thin film exhibited excellent TC performance, including NIR switching of 62.2 %, luminous transmittance of 45.7 %, and solar modulation efficiency of 16.9 %. The VO2 nanosheet was further integrated into flexible and large-area TC smart window, demonstrating great promise for practical applications in thermal management. This study highlights the significance of the 2D morphology of VO2 in enhancing TC performance and phase-transition, offering valuable insights for future advancements in optoelectronic applications.

A Numerical Assessment of Mitigation Strategies to Reduce Local Oxygen and Proton Transport Resistances in Polymer Electrolyte Fuel Cells

The optimized design of the catalyst layer (CL) plays a vital role in improving the performance of polymer electrolyte membrane fuel cells (PEMFCs). The need to improve transport and catalyst activity is especially important at low Pt loading, where local oxygen and ionic transport resistances decrease the performance due to an inevitable reduction in active catalyst sites. In this work, local oxygen and ionic transport are analyzed using direct numerical simulation on virtually reconstructed microstructures. Four morphologies are examined: (i) heterogeneous, (ii) uniform, (iii) uniform vertically-aligned, and (iv) meso-porous ionomer distributions. The results show that the local oxygen transport resistance can be significantly reduced, while maintaining good ionic conductivity, through the design of high porosity CLs (ε≃ 0.6–0.7) with low agglomerated ionomer morphologies. Ionomer coalescence into thick films can be effectively mitigated by increasing the uniformity of thin films and reducing the tortuosity of ionomer distribution (e.g., good ionomer interconnection in supports with a vertical arrangement). The local oxygen resistance can be further decreased by the use of blended ionomers with enhanced oxygen permeability and meso-porous ionomers with oxygen transport routes in both water and ionomer. In summary, achieving high performance at low Pt loading in next-generation CLs must be accomplished through a combination of high porosity, uniform and low tortuosity ionomer distribution, and oxygen transport through activated water.